CMT05N50
P
OWER
MOSFET
GENERAL DESCRIPTION
This Power MOSFET is designed for low voltage, high
speed power switching applications such as switching
regulators, conveters, solenoid and relay drivers.
FEATURES
Higher Current Rating
Lower r
DS(ON)
, Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
PIN CONFIGURATION
TO-220/TO-220FP
SYMBOL
D
Top View
GATE
SOURCE
DRAIN
G
S
1
2
3
N-Channel MOSFET
ORDERING INFORMATION
Part Number
CMT05N50N220
CMT05N50N220FP
Package
TO-220
TO-220FP
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current
－
Continuous
－
Pulsed (Note 1)
Gate-to-Source Voltage
－
Continue
Total Power Dissipation
Derate above 25℃
Single Pulse Avalanche Energy (Note 2)
Operating and Storage Temperature Range
Thermal Resistance
－
Junction to Case
－
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
E
AS
T
J
, T
STG
θ
JC
θ
JA
T
L
Symbol
I
D
I
DM
V
GS
P
D
Value
5.0
18
±20
96
0.77
125
-55 to 150
1.70
62
300
℃
V
W
W/℃
mJ
℃
℃/W
Unit
A
2006/10/11
Rev. 1.1
Champion Microelectronic Corporation
Page 1
CMT05N50
P
OWER
MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25℃.
CMT05N50
Characteristic
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250
μA)
Drain-Source Leakage Current
(V
DS
= 500V, V
GS
= 0 V)
Gate-Source Leakage Current-Forward
(V
gsf
= 20 V, V
DS
= 0 V)
Gate-Source Leakage Current-Reverse
(V
gsr
= -20 V, V
DS
= 0 V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μA)
Static Drain-Source On-Resistance (V
GS
= 10 V, I
D
= 2.7A) (Note 4)
Forward Transconductance (V
DS
= 15V, I
D
= 2.5 A) (Note 4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Reverse Recovery Charge
Forward Turn-On Time
Reverse Recovery Time
Diode Forward Voltage
Note
(1)
(2)
(3)
Repetitive rating; pulse width limited by max. junction temperature
V
DD
= 100V, V
GS
= 10V, L=10mH, I
AS
= 5A, R
G
= 25Ω
I
SD
≦
4.5A, di/dt
≦
75A/μs, V
DD
≦
V
(BR)DSS
, T
J
≦
150℃
I
S
= 5A, V
GS
= 0 V
I
F
= 5A, di/dt = 100A/μs , T
J
= 25℃
Q
rr
t
on
t
rr
V
SD
1.8
**
415
1.5
ns
V
μC
L
S
7.5
nH
(V
DS
= 400V, I
D
= 5A
V
GS
= 10 V) (Note 4)
(V
DD
= 250 V, I
D
= 5 A,
R
G
= 9.1Ω, V
GS
= 10 V) (Note 4)
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
2.8
520
170
11
7.0
9.0
20
10
10
2
3
4.5
730
240
20
10
20
40
20
1.5
Ω
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
V
GS(th)
2.0
4.0
V
I
GSSR
-100
nA
I
GSSF
I
DSS
25
100
nA
μA
Symbol
V
(BR)DSS
Min
500
Typ
Max
Units
V
** Negligible, Dominated by circuit inductance
2006/10/11
Rev. 1.1
Champion Microelectronic Corporation
Page 2
CMT05N50
P
OWER
MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
2006/10/11
Rev. 1.1
Champion Microelectronic Corporation
Page 3
CMT05N50
P
OWER
MOSFET
PACKAGE DIMENSION
TO-220
D
A
c1
φ
F
E
PIN 1: GATE
PIN 2: DRAIN
PIN 3: SOURCE
E1
A
A1
L1
b
b1
c
c1
D
L
E
E1
e
e1
F
L
b1
e1
e
b
A1
c
Side View
φ
L1
Front View
TO-220FP
0
0.1
D
Q
H
R1
C
R
J
.5
0
R1
.5
0
B
I
8±
3.1
A
B
A
C
D
E
E
P
K
O
G
H
I
J
K
M
N
O
P
Q
1.
R
60
G
b
R
b
b1
b2
e
b1
e
Front View
b2
R
N
M
Side View
Back View
2006/10/11
Rev. 1.1
Champion Microelectronic Corporation
Page 4
CMT05N50
P
OWER
MOSFET
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications.
customer should provide adequate design and operating safeguards.
Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
HsinChu Headquarter
5F-1, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
T E L : +886-3-567 9979
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7F-6, No.32, Sec. 1, Chenggong Rd., Nangang
District, Taipei City 115, Taiwan
T E L : +886-2-2788 0558
F A X : +886-2-2788 2985
2006/10/11
Rev. 1.1
Champion Microelectronic Corporation
Page 5
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